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19-4293; Rev 0; 10/08
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer
General Description
The MAX19999 dual-channel downconverter provides 8.3dB of conversion gain, +24dBm input IP3, +11.4dBm 1dB input compression point, and a noise figure of 10.5dB for 3000MHz to 4000MHz WiMAXTM and LTE diversity receiver applications. With an optimized LO frequency range of 2650MHz to 3700MHz, this mixer is ideal for low-side LO injection architectures. In addition to offering excellent linearity and noise performance, the MAX19999 also yields a high level of component integration. This device includes two double-balanced passive mixer cores, two LO buffers, and a pair of differential IF output amplifiers. Integrated onchip baluns allow for single-ended RF and LO inputs. The MAX19999 requires a nominal LO drive of 0dBm and a typical supply current of 388mA at VCC = +5.0V or 279mA at VCC = +3.3V. The MAX19999 is pin compatible with the MAX19997A 1800MHz to 2900MHz mixer and pin similar with the MAX19985/MAX19985A and MAX19995/MAX19995A series of 700MHz to 2200MHz mixers, making this entire family of downconverters ideal for applications where a common PCB layout is used across multiple frequency bands. The MAX19999 is available in a compact 6mm x 6mm, 36-pin thin QFN package with an exposed pad. Electrical performance is guaranteed over the extended temperature range, from TC = -40C to +85C. o o o o o o o o o o o o o o
Features
3000MHz to 4000MHz RF Frequency Range 2650MHz to 3700MHz LO Frequency Range 50MHz to 500MHz IF Frequency Range 8.3dB Conversion Gain +24dBm Input IP3 10.5dB Noise Figure +11.4dBm Input 1dB Compression Point 74dBc Typical 2 x 2 Spurious Rejection at PRF = -10dBm Dual Channels Ideal for Diversity Receiver Applications Integrated LO Buffer Integrated LO and RF Baluns for Single-Ended Inputs Low -3dBm to +3dBm LO Drive Pin Compatible with the MAX19997A 1800MHz to 2900MHz Mixer Pin Similar to the MAX9995/MAX9995A and MAX19995/MAX19995A 1700MHz to 2200MHz Mixers and the MAX9985/MAX9985A and MAX19985/MAX19985A 700MHz to 1000MHz Mixers 39dB Channel-to-Channel Isolation Single +5.0V or +3.3V Supply External Current-Setting Resistors Provide Option for Operating Device in Reduced-Power/ReducedPerformance Mode
MAX19999
Applications
3.5GHz WiMAX and LTE Base Stations Fixed Broadband Wireless Access Microwave Links Wireless Local Loop Private Mobile Radios Military Systems
Pin Configuration/Functional Diagram and Typical Application Circuit appear at end of data sheet.
o o o
Ordering Information
PART MAX19999ETX+ MAX19999ETX+T TEMP RANGE -40C to +85C -40C to +85C PIN-PACKAGE 36 Thin QFN-EP* 36 Thin QFN-EP*
+Denotes a lead-free/RoHS-compliant package. *EP = Exposed pad. T = Tape and reel.
WiMAX is a trademark of WiMAX Forum.
________________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com.
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999
ABSOLUTE MAXIMUM RATINGS
VCC to GND ...........................................................-0.3V to +5.5V RF_, LO to GND.....................................................-0.3V to +0.3V IFM_, IFD_, IFM_SET, IFD_SET, LO_ADJ_M, LO_ADJ_D to GND.................................-0.3V to (VCC + 0.3V) RF_, LO Input Power ......................................................+15dBm RF_, LO Current (RF and LO are DC shorted to GND through balun).................................................................50mA Continuous Power Dissipation (Note 1) ..............................8.7W JA (Notes 2, 3)..............................................................+38C/W JC (Note 3).....................................................................7.4C/W Operating Case Temperature Range (Note 4) ...................................................TC = -40C to +85C Junction Temperature ......................................................+150C Storage Temperature Range .............................-65C to +150C Lead Temperature (soldering, 10s) .................................+300C
Note 1: Based on junction temperature TJ = TC + (JC x VCC x ICC). This formula can be used when the temperature of the exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150C. Note 2: Junction temperature TJ = TA + (JA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is known. The junction temperature must not exceed +150C. Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial. Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, no input RF or LO signals applied, VCC = +4.75V to +5.25V, TC = -40C to +85C. Typical values are at VCC = +5.0V, TC = +25C, unless otherwise noted. R1 = R4 = 750, R2 = R5 = 698.)
PARAMETER Supply Voltage Supply Current SYMBOL VCC ICC Total supply current CONDITIONS MIN 4.75 TYP 5 388 MAX 5.25 420 UNITS V mA
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, no input RF or LO signals applied, T C = -40C to +85C. Typical values are at VCC = +3.3V, TC = +25C, unless otherwise noted. R1, R4 = 1.1k; R2, R5 = 845.) (Note 5)
PARAMETER Supply Voltage Supply Current SYMBOL VCC ICC (Note 6) Total supply current CONDITIONS MIN 3 TYP 3.3 279 MAX 3.6 UNITS V mA
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER RF Frequency LO Frequency SYMBOL fRF fLO (Notes 5, 7) (Notes 5, 7) Using Mini-Circuits TC4-1W-17 4:1 transformer as defined in the Typical Application Circuit, IF matching components affect the IF frequency range (Notes 5, 7) Using alternative Mini-Circuits TC4-1W-7A 4:1 transformer, IF matching components affect the IF frequency range (Notes 5, 7) LO Drive Level PLO (Note 7) CONDITIONS MIN 3000 2650 TYP MAX 4000 3700 UNITS MHz MHz
100
500 MHz
IF Frequency
fIF
50 -3
250 +3 dBm
2
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Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50 sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 3200MHz to 3900MHz, fLO = 2800MHz to 3600MHz, fIF = 350MHz, fRF > fLO, TC = -40C to +85C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 3550MHz, fLO = 3200MHz, fIF = 350MHz, TC = +25C, unless otherwise noted.) (Note 8)
PARAMETER Conversion Gain Conversion Gain Flatness Gain Variation Over Temperature Input Compression Point TCCG IP1dB SYMBOL GC CONDITIONS TC = +25C (Notes 6, 9) fRF = 3200MHz to 3900MHz, over any 100MHz band fRF = 3200MHz to 3900MHz, TC = -40C to +85C (Notes 6, 9, 10) fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone (Notes 6, 9) Third-Order Input Intercept Point IIP3 fRF = 3550MHz, fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, TC = +25C (Notes 6, 9) fRF1 - fRF2 = 1MHz, TC = -40C to +85C Single sideband, no blockers present (Notes 5, 6) Noise Figure NFSSB Single sideband, no blockers present, fRF = 3500MHz, TC = +25C (Notes 5, 6) Single sideband, no blockers present, TC = -40C to +85C fBLOCKER = 3700MHz, PBLOCKER = 8dBm, fRF = 3450MHz, fLO = 3100MHz, PLO = 0dBm, VCC = 5.0V, TC = +25C (Notes 5, 6, 11) PRF = -10dBm, fRF = 3500MHz, fLO = (Notes 5, 6) 3150MHz, fSPUR = fLO + PRF = -5dBm, 175MHz, TC = +25C (Notes 6, 9) PRF = -10dBm, fRF = 3500MHz, fLO = (Notes 5, 6) 3150MHz, fSPUR = fLO + 116.67MHz, TC = +25C PRF = -5dBm, (Notes 6, 9) LO on and IF terminated into a matched impedance RF and IF terminated into a matched impedance ZIF Nominal differential impedance at the IC's IF outputs 68 63 77 67 9.8 21.6 MIN 7.3 TYP 8.3 0.15 -0.01 11.4 24.3 dBm 22 24.3 MAX 9.3 UNITS dB dB dB/C dBm
Third-Order Input Intercept Point Variation Over Temperature
0.3 10.5 10.5 0.018 13
dBm
dB 11.5 dB/C
Noise Figure Temperature Coefficient Noise Figure Under Blocking Conditions
TCNF
NFB
21
25
dB
74 dBc 69 86 dBc 76 15.4 14 200 dB dB
2RF-2LO Spurious Rejection
2x2
3RF-3LO Spurious Rejection
3x3
RF Input Return Loss LO Input Return Loss IF Output Impedance
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3
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50 sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 3200MHz to 3900MHz, fLO = 2800MHz to 3600MHz, fIF = 350MHz, fRF > fLO, TC = -40C to +85C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 3550MHz, fLO = 3200MHz, fIF = 350MHz, TC = +25C, unless otherwise noted.) (Note 8)
PARAMETER SYMBOL CONDITIONS RF terminated into 50, LO driven by a 50 source, IF transformed to 50 using external components shown in the Typical Application Circuit MIN TYP MAX UNITS
IF Output Return Loss
18
dB
RF-to-IF Isolation LO Leakage at RF Port 2LO Leakage at RF Port LO Leakage at IF Port RFMAIN (RFDIV ) converted power measured at IFDIV (IFMAIN), relative to IFMAIN (IFDIV), all unused ports terminated to 50 (Notes 6, 9) (Notes 6, 9)
28 -31 -30 -23 -24
dB dBm dBm dBm
Channel Isolation
36
39
dB
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 3550MHz, fLO = 3200MHz, fIF = 350MHz, TC = +25C, unless otherwise noted.) (Note 8)
PARAMETER Conversion Gain Conversion Gain Flatness Gain Variation Over Temperature Input Compression Point Third-Order Input Intercept Point Third-Order Input Intercept Variation Over Temperature Noise Figure Noise Figure Temperature Coefficient 2RF-2LO Spurious Rejection 3RF-3LO Spurious Rejection RF Input Return Loss LO Input Return Loss NFSSB TCNF 2x2 3x3 TCCG IP1dB IIP3 fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone fRF1 - fRF2 = 1MHz, TC = -40C to +85C Single sideband, no blockers present Single sideband, no blockers present, TC = -40C to +85C fSPUR = fLO + 175MHz fSPUR = fLO + 116.67MHz PRF = -10dBm PRF = -5dBm PRF = -10dBm PRF = -5dBm SYMBOL GC fRF = 3200MHz to 3900MHz, over any 100MHz band fRF = 3200MHz to 3900MHz, TC = -40C to +85C CONDITIONS MIN TYP 8.0 0.15 -0.01 8.4 20.3 0.3 10.5 0.018 74 69 75 65 16 15.5 MAX UNITS dB dB dB/C dBm dBm dBm dB dB/C dBc dBc dB dB
LO on and IF terminated into a matched impedance RF and IF terminated into a matched impedance
4
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Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit, typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 3550MHz, fLO = 3200MHz, fIF = 350MHz, TC = +25C, unless otherwise noted.) (Note 8)
PARAMETER IF Output Impedance SYMBOL ZIF CONDITIONS Nominal differential impedance at the IC's IF outputs RF terminated into 50, LO driven by a 50 source, IF transformed to 50 using external components shown in the Typical Application Circuit MIN TYP 200 MAX UNITS
MAX19999
IF Output Return Loss
19
dB
RF-to-IF Isolation LO Leakage at RF Port 2LO Leakage at RF Port LO Leakage at IF Port RFMAIN (RFDIV ) converted power measured at IFDIV (IFMAIN), relative to IFMAIN (IFDIV), all unused ports terminated to 50
28 -36 -34 -27
dB dBm dBm dBm
Channel Isolation
38.5
dB
Note 5: Note 6: Note 7:
Not production tested. Guaranteed by design and characterization. Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating Characteristics section. Note 8: All limits reflect losses of external components, including a 0.9dB loss at fIF = 350MHz due to the 4:1 impedance transformer. Output measurements were taken at IF outputs of the Typical Application Circuit. Note 9: 100% production tested for functional performance. Note 10: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50 source. Note 11: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
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5
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999
Typical Operating Characteristics
(Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
MAX19999 toc01
CONVERSION GAIN vs. RF FREQUENCY
MAX19999 toc02
CONVERSION GAIN vs. RF FREQUENCY
MAX19999 toc03
10 TC = +25C CONVERSION GAIN (dB) 9 TC = -30C
10
10
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
9
9
8
8 PLO = -3dBm, 0dBm, +3dBm 7
8 VCC = 4.75V, 5.0V, 5.25V 7
7 TC = +85C 6 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
6 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
6 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
MAX19999 toc04
INPUT IP3 vs. RF FREQUENCY
MAX19999 toc05
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE 26 INPUT IP3 (dBm)
MAX19999 toc06
27 PRF = -5dBm/TONE 26 TC = +85C INPUT IP3 (dBm) 25 TC = +25C
27 PRF = -5dBm/TONE 26 INPUT IP3 (dBm)
27
25
25
24 TC = -30C 23
24 PLO = -3dBm, 0dBm, +3dBm 23
24 VCC = 4.75V, 5.0V, 5.25V 23
22 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
22 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
22 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
TC = +85C 12 NOISE FIGURE (dB) TC = +25C NOISE FIGURE (dB) 11 10 9 TC = -30C 8 7 3200 3375 3550 3725 3900 RF FREQUENCY (MHz) 8 7 3200
MAX19999 toc07
NOISE FIGURE vs. RF FREQUENCY
MAX19999 toc08
NOISE FIGURE vs. RF FREQUENCY
MAX19999 toc09
13
13 12 11 10 PLO = -3dBm, 0dBm, +3dBm 9
13 12 NOISE FIGURE (dB) 11 10 VCC = 4.75V, 5.0V, 5.25V 9 8 7
3375 3550 3725 RF FREQUENCY (MHz)
3900
3200
3375 3550 3725 RF FREQUENCY (MHz)
3900
6
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Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.)
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19999 toc10
MAX19999
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19999 toc11
2RF-2LO RESPONSE vs. RF FREQUENCY
PRF = -5dBm 80
MAX19999 toc12
90 PRF = -5dBm 80 TC = +85C 70
90 PRF = -5dBm PLO = 0dBm 2RF-2LO RESPONSE (dBc) 80
90
2RF-2LO RESPONSE (dBc)
2RF-2LO RESPONSE (dBc)
70 PLO = +3dBm 60 PLO = -3dBm
70
60
TC = +25C TC = -30C
60 VCC = 4.75V, 5.0V, 5.25V
50 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000
50 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000
50 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19999 toc13
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19999 toc14
3RF-3LO RESPONSE vs. RF FREQUENCY
PRF = -5dBm 85
MAX19999 toc15
95 PRF = -5dBm 85
95 PRF = -5dBm 85
95
3RF-3LO RESPONSE (dBc)
3RF-3LO RESPONSE (dBc)
3RF-3LO RESPONSE (dBc)
75 TC = -30C, +25C, +85C 65
75 PLO = -3dBm, 0dBm, +3dBm 65
75 VCC = 4.75V, 5.0V, 5.25V 65
55 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000
55 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000
55 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000
INPUT P1dB vs. RF FREQUENCY
MAX19999 toc16
INPUT P1dB vs. RF FREQUENCY
MAX19999 toc17
INPUT P1dB vs. RF FREQUENCY
VCC = 5.25V 12 INPUT P1dB (dBm)
MAX19999 toc18
13 TC = +85C 12 INPUT P1dB (dBm)
13
13
12 INPUT P1dB (dBm)
11 TC = -30C 10 TC = +25C
11 PLO = -3dBm, 0dBm, +3dBm 10
11 VCC = 5.0V 10 VCC = 4.75V
9 3200 3375 3550 3725 RF FREQUENCY (MHz) 3900
9 3200 3375 3550 3725 RF FREQUENCY (MHz) 3900
9 3200 3375 3550 3725 RF FREQUENCY (MHz) 3900
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7
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.)
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19999 toc19
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19999 toc20
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19999 toc21
50
50
50
CHANNEL ISOLATION (dB)
CHANNEL ISOLATION (dB)
CHANNEL ISOLATION (dB)
45
45
45
40
40
40
35
TC = -30C, +25C, +85C
35
PLO = -3dBm, 0dBm, +3dBm
35
VCC = 4.75V, 5.0V, 5.25V
30 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000
30 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000
30 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19999 toc22
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19999 toc23
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19999 toc24
0 -10 TC = -30C -20 -30 -40 -50 -60 2600 2800 3000 3200 3400 LO FREQUENCY (MHz) TC = +25C, +85C
0 -10 -20 -30 -40 -50 -60 PLO = -3dBm, 0dBm, +3dBm
0 -10 -20 -30 -40 -50 -60 VCC = 4.75V, 5.0V, 5.25V
LO LEAKAGE AT IF PORT (dBm)
LO LEAKAGE AT IF PORT (dBm)
LO LEAKAGE AT IF PORT (dBm)
3600
2600
2800
3000 3200 3400 LO FREQUENCY (MHz)
3600
2600
2800
3000 3200 3400 LO FREQUENCY (MHz)
3600
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19999 toc25
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19999 toc26
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19999 toc27
40
40
40 VCC = 4.75V, 5.0V, 5.25V RF-TO-IF ISOLATION (dB) 30
RF-TO-IF ISOLATION (dB)
30
TC = +85C
TC = +25C
RF-TO-IF ISOLATION (dB)
30
20
TC = -30C
20
PLO = -3dBm, 0dBm, +3dBm
20
10 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000
10 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000
10 3000 3200 3400 3600 3800 RF FREQUENCY (MHz) 4000
8
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Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19999 toc28
MAX19999
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19999 toc29
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19999 toc30
-10
-10
-10
LO LEAKAGE AT RF PORT (dBm)
-20
TC = -30C, +25C, +85C
LO LEAKAGE AT RF PORT (dBm)
-20
PLO = -3dBm, 0dBm, +3dBm
LO LEAKAGE AT RF PORT (dBm)
-20
VCC = 4.75V, 5.0V, 5.25V
-30
-30
-30
-40
-40
-40
-50 2700 3100 3500 LO FREQUENCY (MHz) 3900
-50 2700 3100 3500 LO FREQUENCY (MHz) 3900
-50 2700 3100 3500 LO FREQUENCY (MHz) 3900
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19999 toc31
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19999 toc32
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19999 toc33
-10 2LO LEAKAGE AT RF PORT (dBm) TC = -30C, +25C, +85C -20
-10 2LO LEAKAGE AT RF PORT (dBm)
-10 2LO LEAKAGE AT RF PORT (dBm)
-20
PLO = -3dBm, 0dBm, +3dBm
-20
VCC = 4.75V, 5.0V, 5.25V
-30
-30
-30
-40
-40
-40
-50 2700 3100 3500 LO FREQUENCY (MHz) 3900
-50 2700 3100 3500 LO FREQUENCY (MHz) 3900
-50 2700 3100 3500 LO FREQUENCY (MHz) 3900
RF PORT RETURN LOSS vs. RF FREQUENCY
MAX19999 toc34
IF PORT RETURN LOSS vs. IF FREQUENCY
fLO = 3200MHz 5 IF PORT RETURN LOSS (dB) VCC = 4.75V, 5.0V, 5.25V 10 15 20 25 30
MAX19999 toc35
0 fIF = 350MHz 5 RF PORT RETURN LOSS (dB) 10 15 20 PLO = -3dBm, 0dBm, +3dBm 25 30 3000 3200 3400 3600 3800 RF FREQUENCY (MHz)
0
4000
50
140
230 320 410 IF FREQUENCY (MHz)
500
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9
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +5.0V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.)
LO PORT RETURN LOSS vs. LO FREQUENCY
MAX19999 toc36
SUPPLY CURRENT vs. TEMPERATURE (TC)
VCC = 5.25V 390 SUPPLY CURRENT (mA)
MAX19999 toc37
0
400
LO PORT RETURN LOSS (dB)
5 PLO = -3dBm 10
380
15 PLO = 0dBm 20 PLO = +3dBm
370 VCC = 4.75V 360 VCC = 5.0V
25 2650
350 2900 3150 3400 LO FREQUENCY (MHz) 3650 -35 -15 5 25 45 TEMPERATURE (C) 65 85
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
MAX19999 toc38
CONVERSION GAIN vs. RF FREQUENCY
VCC = 3.3V CONVERSION GAIN (dB) 9
MAX19999 toc39
CONVERSION GAIN vs. RF FREQUENCY
MAX19999 toc40
10 TC = +25C CONVERSION GAIN (dB) 9 VCC = 3.3V TC = -30C
10
10
CONVERSION GAIN (dB)
9
8
8
8
7 TC = +85C 6 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
7
PLO = -3dBm, 0dBm, +3dBm
7
VCC = 3.0V, 3.3V, 3.6V
6 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
6 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
10
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Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.)
INPUT IP3 vs. RF FREQUENCY
MAX19999 toc41
MAX19999
INPUT IP3 vs. RF FREQUENCY
MAX19999 toc42
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE 22 INPUT IP3 (dBm)
MAX19999 toc43
23 TC = +85C 22 INPUT IP3 (dBm) TC = +25C 21 PRF = -5dBm/TONE VCC = 3.3V
23 PRF = -5dBm/TONE VCC = 3.3V 22 INPUT IP3 (dBm)
23
21
21
20
20 PLO = -3dBm, 0dBm, +3dBm
20
19
TC = -30C
19
19
VCC = 3.0V, 3.3V, 3.6V
18 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
18 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
18 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
MAX19999 toc44
NOISE FIGURE vs. RF FREQUENCY
VCC = 3.3V 12 NOISE FIGURE (dB) 11 10 9 8 7 PLO = -3dBm, 0dBm, +3dBm
MAX19999 toc45
NOISE FIGURE vs. RF FREQUENCY
MAX19999 toc46
13 TC = +85C 12 NOISE FIGURE (dB) 11 10 9 8 7 3200 3375 3550 3725 TC = -30C TC = +25C VCC = 3.3V
13
13 12 NOISE FIGURE (dB) 11 10 9 8 7 VCC = 3.0V, 3.3V, 3.6V
3900
3200
3375
3550
3725
3900
3200
3375
3550
3725
3900
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
2RF-2LO RESPONSE vs. RF FREQUENCY
PRF = -5dBm VCC = 3.3V 2RF-2LO RESPONSE (dBc) 80 TC = +85C
MAX19999 toc47
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19999 toc48
2RF-2LO RESPONSE vs. RF FREQUENCY
PRF = -5dBm 2RF-2LO RESPONSE (dBc) 80 VCC = 3.6V 70
MAX19999 toc49
90
90 PRF = -5dBm 2RF-2LO RESPONSE (dBc) 80 PLO = 0dBm VCC = 3.3V
90
70
70
60 TC = -30C 50 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz) TC = +25C
60
PLO = +3dBm PLO = -3dBm
60 VCC = 3.3V VCC = 3.0V 50
50 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
______________________________________________________________________________________
11
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.)
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19999 toc50
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19999 toc51
3RF-3LO RESPONSE vs. RF FREQUENCY
PRF = -5dBm 3RF-3LO RESPONSE (dBc) 75
MAX19999 toc52 MAX19999 toc58 MAX19999 toc55
85 PRF = -5dBm 3RF-3LO RESPONSE (dBc) 75 TC = +85C VCC = 3.3V
85 PRF = -5dBm VCC = 3.3V 3RF-3LO RESPONSE (dBc) 75
85
65
65
65
55
TC = -30C
TC = +25C
55
PLO = -3dBm, 0dBm, +3dBm
55
VCC = 3.0V, 3.3V, 3.6V
45 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
45 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
45 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
MAX19999 toc53
INPUT P1dB vs. RF FREQUENCY
VCC = 3.3V 9 INPUT P1dB (dBm) INPUT P1dB (dBm)
MAX19999 toc54
INPUT P1dB vs. RF FREQUENCY
10 VCC = 3.6V 9
10 TC = +85C 9 INPUT P1dB (dBm) VCC = 3.3V
10
8 TC = +25C 7 TC = -30C
8
8 VCC = 3.3V 7 VCC = 3.0V
7
PLO = -3dBm, 0dBm, +3dBm
6 3200 3375 3550 3725 3900 RF FREQUENCY (MHz)
6 3200 3375 3550 3725 3900 RF FREQUENCY (MHz)
6 3200 3375 3550 3725 3900 RF FREQUENCY (MHz)
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19999 toc56
CHANNEL ISOLATION vs. RF FREQUENCY
VCC = 3.3V CHANNEL ISOLATION (dB) 45
MAX19999 toc57
CHANNEL ISOLATION vs. RF FREQUENCY
50
50 VCC = 3.3V CHANNEL ISOLATION (dB) 45
50
CHANNEL ISOLATION (dB)
45
40
40
40
35
TC = -30C, +25C, +85C
35
PLO = -3dBm, 0dBm, +3dBm
35
VCC = 3.0V, 3.3V, 3.6V
30 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
30 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
30 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
12
______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19999 toc59
MAX19999
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
VCC = 3.3V LO LEAKAGE AT IF PORT (dBm) -10 -20 -30 PLO = -3dBm, 0dBm, +3dBm -40 -50 -60
MAX19999 toc60
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX19999 toc61
0 VCC = 3.3V LO LEAKAGE AT IF PORT (dBm) -10 -20 -30 -40 -50 -60 2600 2800 3000 3200 3400 TC = +85C TC = +25C TC = -30C
0
0 -10 -20 -30 VCC = 3.0V, 3.3V, 3.6V -40 -50 -60
LO LEAKAGE AT IF PORT (dBm)
3600
2600
2800
3000
3200
3400
3600
2600
2800
3000
3200
3400
3600
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19999 toc62
RF-TO-IF ISOLATION vs. RF FREQUENCY
VCC = 3.3V RF-TO-IF ISOLATION (dB) PLO = -3dBm, 0dBm, +3dBm 30
MAX19999 toc63
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19999 toc64
40 VCC = 3.3V TC = +85C RF-TO-IF ISOLATION (dB) 30
40
40 VCC = 3.0V, 3.3V, 3.6V 30
RF-TO-IF ISOLATION (dB)
20 TC = -30C
TC = +25C
20
20
10 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
10 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
10 3000 3200 3400 3600 3800 4000 RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19999 toc65
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
VCC = 3.3V LO LEAKAGE AT RF PORT (dBm) -20 PLO = -3dBm, 0dBm, +3dBm -30
MAX19999 toc66
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19999 toc67
-10 VCC = 3.3V LO LEAKAGE AT RF PORT (dBm) -20 TC = -30C, +25C, +85C -30
-10
-10 LO LEAKAGE AT RF PORT (dBm)
-20 VCC = 3.0V, 3.3V, 3.6V -30
-40
-40
-40
-50 2700 3100 3500 3900 LO FREQUENCY (MHz)
-50 2700 3100 3500 3900 LO FREQUENCY (MHz)
-50 2700 3100 3500 3900 LO FREQUENCY (MHz)
______________________________________________________________________________________
13
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +3.3V, LO is low-side injected for a 350MHz IF, PLO = 0dBm, PRF = -5dBm, TC =+25C, unless otherwise noted.)
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19999 toc68
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
VCC = 3.3V
MAX19999 toc69
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX19999 toc70
-10 2LO LEAKAGE AT RF PORT (dBm)
VCC = 3.3V
-10 2LO LEAKAGE AT RF PORT (dBm)
-10 2LO LEAKAGE AT RF PORT (dBm)
-20 TC = -30C, +25C, +85C -30
-20 PLO = -3dBm, 0dBm, +3dBm -30
-20 VCC = 3.0V, 3.3V, 3.6V -30
-40
-40
-40
-50 2700 3100 3500 3900 LO FREQUENCY (MHz)
-50 2700
3100
3500
3900
-50 2700
3100
3500
3900
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF PORT RETURN LOSS vs. RF FREQUENCY
VCC = 3.3V fIF = 350MHz
MAX19999 toc71
IF PORT RETURN LOSS vs. IF FREQUENCY
fLO = 3200MHz
MAX19999 toc72
0 5 RF PORT RETURN LOSS (dB) 10 15 20 25
0 5 IF PORT RETURN LOSS (dB) 10 15 20 25 30
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.0V, 3.3V, 3.6V
30 3000
3200
3400
3600
3800
4000
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO PORT RETURN LOSS vs. LO FREQUENCY
VCC = 3.3V
MAX19999 toc73
SUPPLY CURRENT vs. TEMPERATURE (TC)
VCC = 3.6V VCC = 3.3V
MAX19999 toc74
0
300 290 SUPPLY CURRENT (mA) 280 270 260 250 240 -35 VCC = 3.0V
LO PORT RETURN LOSS (dB)
5 PLO = 0dBm 10 PLO = -3dBm
15
20
PLO = +3dBm
25 2650
2900
3150
3400
3650
-15
5
25
45
65
85
LO FREQUENCY (MHz)
TEMPERATURE (C)
14
______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer
Pin Description
PIN 1 2, 5, 6, 8, 12, 15, 18, 23, 28, 31, 34 3, 7, 20, 22, 24, 25, 26, 27 4, 10, 16, 21, 30, 36 9 11 13, 14 17 19 29 32, 33 35 NAME RFMAIN GND GND VCC RFDIV IFD_SET IFD+, IFDLO_ADJ_D LO LO_ADJ_M IFM-, IFM+ IFM_SET FUNCTION Main Channel RF Input. Internally matched to 50. Requires an input DC-blocking capacitor. Ground. Not internally connected. Ground these pins or leave unconnected. Ground. Internally connected to the exposed pad (EP). Connect all ground pins and the exposed pad together. Power Supply. Connect bypass capacitors as close as possible to the pin (see the Typical Application Circuit). Diversity Channel RF Input. This input is internally matched to 50. Requires a DC-blocking capacitor. IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity IF amplifier. Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity LO amplifier. Local Oscillator Input. This input is internally matched to 50. Requires an input DC-blocking capacitor. LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main LO amplifier. Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main IF amplifier. Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple via grounds are also required to achieve the noted RF performance
MAX19999
--
EP
Detailed Description
The MAX19999 provides high linearity and low noise figure for a multitude of 3000MHz to 4000MHz WiMAX and LTE base-station applications. This device operates over an LO range of 2650MHz to 3700MHz and an IF range of 50MHz to 500MHz. Integrated baluns and matching circuitry allow 50 single-ended interfaces to the RF and LO ports. The integrated LO buffer provides a high drive level to the mixer core, reducing the LO drive required at the MAX19999's input to a range of -3dBm to +3dBm. The IF port incorporates a differential output, which is ideal for providing enhanced 2RF-2LO performance.
required because the input is internally DC shorted to ground through each channel's on-chip balun. When using a 1.5pF DC-blocking capacitor, the RF port input return loss is typically 15dB over the RF frequency range of 3200MHz to 3900MHz.
LO Input, Buffer, and Balun
A two-stage internal LO buffer allows a wide input power range for the LO drive. All guaranteed specifications are for an LO signal power from -3dBm to +3dBm. The on-chip low-loss balun, along with an LO buffer, drives the double-balanced mixer. All interfacing and matching components from the LO input to the IF outputs are integrated on chip.
RF Input and Balun
The MAX19999's two RF inputs (RFMAIN and RFDIV) provide a 50 match when combined with a series DCblocking capacitor. This DC-blocking capacitor is
High-Linearity Mixer
The core of the MAX19999 is a pair of double-balanced, high-performance passive mixers. Exceptional
15
______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999
linearity is provided by the large LO swing from the onchip LO buffer. When combined with the integrated IF amplifiers, the cascaded IIP3, 2RF-2LO rejection, and NF performance is typically +24dBm, 74dBc, and 10.5dB, respectively, for low-side LO injection architectures covering the 3000MHz to 4000MHz RF band. Significant reductions in power consumption can also be realized by operating the mixer with an optional supply voltage of 3.3V. Doing so reduces the overall power consumption by up to 53%. See the +3.3V Supply AC Electrical Characteristics table and the relevant +3.3V curves in the Typical Operating Characteristics section to evaluate the power vs. performance trade-offs.
Differential IF Output Amplifier
The MAX19999 mixers have an IF frequency range of 50MHz to 500MHz. The differential, open-collector IF output ports require external pullup inductors to VCC. These pullup inductors are also used to resonate out the parasitic shunt capacitance of the IC, PCB components, and PCB to provide an optimized IF match at the frequency of interest. Note that differential IF outputs are ideal for providing enhanced 2RF-2LO rejection performance. Single-ended IF applications require a 4:1 balun to transform the 200 differential output impedance to a 50 single-ended output. After the balun, the IF return loss is typically 18dB.
Layout Considerations
A properly designed PCB is an essential part of any RF/microwave circuit. Keep RF signal lines as short as possible to reduce losses, radiation, and inductance. For the best performance, route the ground pin traces directly to the exposed pad under the package. The PCB exposed pad MUST be connected to the ground plane of the PCB. It is suggested that multiple vias be used to connect this pad to the lower level ground planes. This method provides a good RF/thermal-conduction path for the device. Solder the exposed pad on the bottom of the device package to the PCB. The MAX19999 evaluation kit can be used as a reference for board layout. Gerber files are available upon request at www.maxim-ic.com.
Applications Information
Input and Output Matching
The RF and LO inputs are internally matched to 50. No matching components are required for RF frequencies ranging from 3000MHz to 4000MHz. RF and LO inputs require only DC-blocking capacitors for interfacing. The IF output impedance is 200 (differential). For evaluation, an external low-loss 4:1 (impedance ratio) balun transforms this impedance down to a 50 singleended output (see the Typical Application Circuit).
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each VCC pin with the capacitors shown in the Typical Application Circuit.
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX19999's 36-pin thin QFN-EP package provides a low thermal-resistance path to the die. It is important that the PCB on which the MAX19999 is mounted be designed to conduct heat from the exposed pad. In addition, provide the exposed pad with a low-inductance path to electrical ground. The exposed pad MUST be soldered to a ground plane on the PCB, either directly or through an array of plated via holes.
Reduced-Power Mode
Each channel of the MAX19999 has two pins (LO_ADJ, IF_SET) that allow external resistors to set the internal bias currents. Nominal values for these resistors are given in Table 1. Larger valued resistors can be used to reduce power dissipation at the expense of some performance loss. If 1% resistors are not readily available, 5% resistors can be substituted.
16
______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999
Table 1. Application Circuit Component Values
DESIGNATION C1, C8, C14 C4, C9, C13, C15, C17, C18 C10, C11, C12, C19, C20, C21 L1-L4 QTY 3 6 6 4 DESCRIPTION 1.5pF microwave capacitors (0402) 0.01F microwave capacitors (0402) 82pF microwave capacitors (0603) 120nH wire-wound high-Q inductors* (0805) 750 1% resistor (0402). Use for VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. See the Typical Operating Characteristics. R1, R4 2 1.1k 1% resistor (0402). Use for VCC = +3.3V applications. Larger values can be used to reduce power at the expense Digi-Key Corp. of some performance loss. See the Typical Operating Characteristics. 698 1% resistor (0402). Use for VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. See the Typical Operating Characteristics. R2, R5 2 845 1% resistor (0402). Use for VCC = +3.3V applications. Larger values can be used to reduce power at the expense of some performance loss. See the Typical Operating Characteristics. 0 resistors (1206). These resistors can be increased in value to reduce power dissipation in the device but will reduce the compression point. Full P1dB performance achieved using 0 . 4:1 IF balun TC4-1W-17+ MAX19999 IC (36 TQFN-EP) Digi-Key Corp. SUPPLIER Murata Electronics North America, Inc. Murata Electronics North America, Inc. Murata Electronics North America, Inc. Coilcraft, Inc.
Digi-Key Corp.
Digi-Key Corp.
R3, R6
2
Digi-Key Corp.
T1, T2 U1
2 1
Mini-Circuits Maxim Integrated Products, Inc.
*Use 390nH (0805) inductors for an IF frequency of 200MHz. Contact the factory for details.
______________________________________________________________________________________
17
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer MAX19999
Typical Application Circuit
C19
T1 VCC L1* R3 C21 IF MAIN OUTPUT
L2* R1 VCC C20 4:1 VCC
IFM_SET
IFM+
GND
LO_ADJ_M
C18
R2
C17
IFM-
C1 RF MAIN INPUT
+
RFMAIN GND GND 1 2 3 4 5 6 7 8 9
36
35
34
33
32
31
30
29
28 GND
VCC
GND
VCC
27
GND GND GND GND GND GND VCC VCC GND LO C14 C15
MAX19999
26 25 24 23 22 21
VCC VCC C4 GND GND GND GND RF DIV INPUT C8 RFDIV
EXPOSED PAD
20 19
LO
10
11
12
13
14
15
16
17 LO_ADJ_D
IFD_SET
GND
GND
VCC C9
R4
GND
IFD+
IFD-
VCC
VCC
18
R5
VCC
C13 C11
T2 L4* VCC R6 C12
L3* *USE 390nH (0805) INDUCTORS FOR AN IF FREQUENCY OF 200MHz. CONTACT THE FACTORY FOR DETAILS. C10 4:1
IF DIV OUTPUT
18
______________________________________________________________________________________
Dual, SiGe High-Linearity, 3000MHz to 4000MHz Downconversion Mixer with LO Buffer
Pin Configuration/Functional Diagram
29 LO_ADJ_M 35 IFM_SET
MAX19999
33 IFM+
TOP VIEW
36 VCC
32 IFM-
34 GND
31 GND
+
RFMAIN GND GND VCC GND GND GND GND RFDIV 1 2 3 4 5 6 7 8 9
28 GND
27
30 VCC
GND GND GND GND GND GND VCC GND LO
MAX19999
26 25 24 23 22 21
EXPOSED PAD
20 19
10
11
12
13
14
15
16
17 LO_ADJ_D
IFD+
IFD_SET
IFD-
GND
GND
THIN QFN-EP (6mm x 6mm)
EXPOSED PAD ON THE BOTTOM OF THE PACKAGE.
GND
VCC
VCC
18
Chip Information
PROCESS: SiGe BiCMOS
PACKAGE TYPE 36 Thin QFN-EP
Package Information
For the latest package outline information and land patterns, go to www.maxim-ic.com/packages. PACKAGE CODE T3666+2 DOCUMENT NO. 21-0141
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 19
(c) 2008 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc.

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